Contrast enhanced photolithography
US7022452B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 4, 2002 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | May 2, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Contrast enhanced photolithography methods and devices formed by the same are described. In accordance with these methods, a photoresist layer is formed on a substrate. A contrast enhancing system including a solution or dispersion of a photobleachable dye is formed on the photoresist layer. The photoresist layer is exposed through an imaging pattern and through the contrast enhancing system to radiation having a wavelength between about 230 nm and about 300 nm. The contrast enhancing layer is removed, and the photoresist layer is developed to form a photoresist pattern on the substrate. The contrast enhancing system may be removed and the photoresist layer may be developed in a single process step or in different process steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.