Semiconductor device and method for fabricating the same
US7022530B2 · kind B2 · utility
2Cited by
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15Claims
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Key dates
| Filing date | Apr 3, 2002 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Jan 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.