Production method of SiC monitor wafer
US7022545B2 · kind B2 · utility
6Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2003 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Jan 10, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.