Patent · US Expired

Method for making thin film devices intended for solar cells or silicon-on-insulator (SOI) applications

US7022585B2 · kind B2 · utility

45Cited by
5References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 24, 2003
Grant dateApr 4, 2006
Priority date
Expiry dateAug 13, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76259
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In one inventive aspect, a thin film device is manufactured by (a) forming a porous semiconductor layer in the form of a thin film on an original substrate, the formation being immediately followed by (b) separation of the thin film by a lift-off process from the original substrate; (c) transfer of the thin film to a dummy support, the thin film not being attached to the dummy support; (d) fabrication of a device on top of the thin film; and (e) transfer and attachment of said device on said thin film on a foreign substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.