Method for forming quantum dots using metal thin film or metal powder
US7022628B2 · kind B2 · utility
11Cited by
3References
22Claims
0Family size
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Key dates
| Filing date | Oct 29, 2003 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Dec 20, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/90
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed herein is a method for forming quantum dots, comprising the steps of (a) depositing a metal thin layer onto a substrate, (b) coating a dielectric precursor onto the metal thin layer, and (c) stepwisely heating the resultant substrate; or a method for forming quantum dots, comprising the steps of (a) mixing a dielectric precursor diluted in a solvent and a metal powder and stirring the mixture, (b) coating the mixture onto a substrate, and (c) heating the resultant substrate. The method can easily control the size, density and uniformity of metal oxide quantum dots.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.