Ion implanter and method of preventing undesirable ions from implanting a target wafer
US7023003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2004 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Apr 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Re of a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ram and Re exceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.