Thin-film semiconductor device and liquid crystal display
US7023015B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Aug 12, 2003 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Sep 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
Abstract
A thin-film semiconductor device is provided including a plurality of thin-film transistors (TFT) having different driving voltages formed on an glass substrate, wherein a gate insulator electric field at each of the driving voltages of the plurality of thin-film transistors is in a range of about 1 MV/cm to 2 MV/cm, and a drain concentration of p-type thin-film transistors (TFT) is in a range of about 3E+19/cm3 to 1E+20/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.