Patent · US Expired

Negative voltage generator for a semiconductor memory device

US7023262B2 · kind B2 · utility

9Cited by
27References
1Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 26, 2004
Grant dateApr 4, 2006
Priority date
Expiry dateAug 28, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH02M3/071
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A negative voltage generator is controlled responsive to a word line precharge signal. Voltage fluctuations in a negatively biased word line scheme are reduced by using a kicker circuit to provide a predetermined amount of negative charge to shut off a word line during a precharge operation. The negative voltage generator includes first and second negative charge pumps. The second charge pump is activated responsive to the word line precharge signal. A negative voltage regulator can be used to regulate a negative voltage signal. A level shifter uses two voltage dividers and a differential amplifier to reduce response time, output ripple, and sensitivity to process and temperature variations. A negative voltage regulator cancels ripple from a charge pump to provide a stable negative bias voltage and reduce the amount of charge needed to precharge a word line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.