Patent · US Expired

Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge

US7025856B2 · kind B2 · utility

2Cited by
14References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 2, 2001
Grant dateApr 11, 2006
Priority date
Expiry dateFeb 2, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/31
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.