Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge
US7025856B2 · kind B2 · utility
2Cited by
14References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2001 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Feb 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.