Spin-valve type magnetoresistance sensor and thin-film magnetic head
US7026063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2001 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Jan 13, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1129
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method and apparatus of a spin-type magnetoresistance sensor having a free and pinned magnetic layer stacked with a non-magnetic interposed layer are disclosed. Specifically, the spin-valve type magnetoresistance sensor of the present invention is equipped with a free ferromagnetic layer, a pinned ferromagnetic layer, a non-magnetic spacer layer which is sandwiched between the aforementioned ferromagnetic layers, an anti-ferromagnetic layer which is disposed adjacent to the aforementioned pinned ferromagnetic layer and which is used to pin the direction of magnetization of said pinned ferromagnetic layer, a non-magnetic back layer which is disposed adjacent to the aforementioned free ferromagnetic layer and which is stacked on the opposite side the free ferromagnetic layer from the aforementioned nonmagnetic spacer layer, and an electron-reflective layer which is disposed adjacent to the aforementioned back layer and which is stacked on the opposite side of the back layer from the aforementioned free ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.