Long-wavelength semiconductor light emitting device and its manufacturing method
US7026183B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Aug 13, 2004 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Sep 21, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.