Methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride, mercury telluride, and cadmium telluride
US7026228B1 · kind B1 · utility
2Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2000 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Feb 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of depositing Hg1-xCdxTe onto a substrate, in a MOVPE technique, where 0≦x≦1; comprising the step of reacting together a volatile organotellurium compound, and one or both of (i) a volatile organocadmium compound and (ii) mercury vapour; characterised in that the organotellurium compound is isopropylallyltelluride. The invention also relates to devices, such as infrared sensors and solar cells, that comprise Hg1-xCdxTe materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.