Patent · US Expired

Method of optimized stitching for digital micro-mirror device

US7026251B2 · kind B2 · utility

0Cited by
3References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 12, 2002
Grant dateApr 11, 2006
Priority date
Expiry dateOct 10, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70475
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method of providing a reticle layout for a die having at least three patterns, namely a right pattern, a center pattern, and a left pattern, where the center pattern is oversized relative to the photolithography step size. To avoid the non-uniformity effects resulting from stitching the center pattern, the center pattern size is minimized. This is accomplished by moving portions of the center pattern to the left and right patterns.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.