Method for making thin-film semiconductors based on I-III-VI2 compounds, for photovoltaic applications
US7026258B2 · kind B2 · utility
42Cited by
2References
17Claims
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Key dates
| Filing date | Apr 23, 2003 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Apr 23, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.