Phase change memory element capable of low power operation and method of fabricating the same
US7026639B2 · kind B2 · utility
20Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2003 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Aug 31, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Provided is a phase-change element capable of operating with low power consumption and a method of manufacturing the same. The phase-change element comprises a first electrode used as a heating layer, a second electrode, which is laterally disposed adjacent to the first electrode, and a memory layer made of a phase-change material located between and contacting the side surfaces of the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.