High radiance led chip and a method for producing same

US7026657B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Georg Bogner · Lappersdorf, DE
• Siegmar Kugler · Regensburg, DE
• Ernst Nirschl · Wenzenbach, DE
• Raimund Oberschmid · Sinzing, DE
• Karl-Heinz Schlereth · Burglengenfeld, DE
• Olaf Schoenfeld · Regensburg, DE
• Norbert Stath · Regensburg, DE
• Gerald Neumann · Regensburg, DE

Key dates

• Filing date: Apr 19, 2001
• Grant date: Apr 11, 2006
• Expiry date: Apr 19, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light.The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.