Memory array having a layer with electrical conductivity anisotropy
US7026676B2 · kind B2 · utility
11Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2004 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Jun 29, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B9/04
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A memory array includes a memory layer that has hysteretic domains with domain axes extending between first and second memory layer surfaces. A conductive layer on the first memory layer surface has anisotropically increased electrical conductivity in a thickness direction. A movable conductive probe has a contact area on the conductive layer and moves to access a selected hysteretic domain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.