Magnetoresistive element, magnetic memory cell, and magnetic memory device, and method for manufacturing the same
US7026677B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2004 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Jul 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a magnetic memory device capable of performing stable operation efficiently using a magnetic field generated by write current and formed with high precision while realizing a compact configuration. Since a plating film is used for at least a part of a magnetic yoke, as compared with the case of formation by a dry film forming method, sufficient thickness and higher dimensional precision can be obtained. Consequently, a more stabilized return magnetic field can be generated and high reliability can be assured. Neighboring memory cells can be disposed at narrower intervals, so that the invention is suitable for realizing higher integration and higher packing density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.