Thin film capacitive element, method for producing same and electronic device
US7026680B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2004 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Mar 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
Abstract
An integrated thin film capacitive element comprising a dielectric material of the specified composition that exhibits increased voltage tunability of capacitance and capacitance density and a production process thereof are disclosed. The integrated thin film capacitive element comprises a capacitor structure constituted from a lower electrode, a dielectric layer comprised of the high dielectric constant material represented by the formula: (Ba(1-y)(1-x)Sr(1-y)xYy)Ti1+zO3+δ with the range 0<x<1, 0.007<y<0.02, −1<δ<0.5, and (Ba(1-y)(1-x)+Sr(1-y)x)/Ti1+z<1, and an upper electrode. An electronic device comprising the capacitive element of the present invention is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.