Patent · US Expired

Silicon substrate as a light modulator sacrificial layer

US7027202B1 · kind B1 · utility

58Cited by
767References
13Claims
0Family size

Inventors

Key dates

Filing dateFeb 28, 2003
Grant dateApr 11, 2006
Priority date—
Expiry dateOct 26, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B5/1857
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optical MEM device is fabricated with a patterned device layer formed on a silicon wafer. Preferably, the patterned device layer is patterned with plurality of ribbons and/or access trenches. The central portion of the ribbon is released from the silicon wafer using a selective etch process, wherein a cavity is formed under the central portion of the ribbon, while opposing ribbon ends remain attached to the wafer. The selective etching process preferably utilizes an enchant comprising xenon difluoride. In accordance with further embodiments, the silicon wafer is doped, patterned or otherwise modified to enhance the selectivity of the etching process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.