Spin valve sensor for high areal density applications
US7027270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2002 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Apr 17, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The magnetoresistive sensor has a bottom shield, a nonmagnetic metallic pedestal, a bottom reader gap, a biasing element, a magnetoresistive stack, current leads, a top reader gap, and a top shield. The nonmagnetic metallic pedestal is positioned on a portion of the bottom shield and the nonmagnetic metallic pedestal has a width less than the width of the bottom shield. The bottom reader gap is positioned on the nonmagnetic metallic pedestal and on the bottom shield such that a portion of the bottom reader gap over the nonmagnetic metallic pedestal is raised relative to portions of the bottom reader gap not over the nonmagnetic metallic pedestal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.