Method of forming silicon carbide and silicon nitride composite

US7029613B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Julin Wan · Rexford, US
• Matthew J. Gasch · Sacramento, US
• Amiya K. Mukherjee · Davis, US

Key dates

• Filing date: Sep 8, 2003
• Grant date: Apr 18, 2006
• Expiry date: Sep 8, 2023

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C04B2235/96
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Densified composites of silicon nitride and silicon carbide that exhibit high creep resistance are obtained by mechanically activating a mixture of amorphous powders of silicon nitride and silicon carbide and sintering the mechanically activated mixture in the presence of an electric field under high pressure. The grain size in the resulting composite is less than 100 nanometers for all components of the composite, and the composite exhibits high creep resistance.