Immersion lithography methods using carbon dioxide
US7029832B2 · kind B2 · utility
42Cited by
5References
47Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 11, 2003 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Oct 26, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A substrate is patterned by performing immersion lithography on a photoresist layer on the substrate using carbon dioxide. The immersion layer may be provided and/or removed and/or the photoresist layer may be developed, dried and/or removed using carbon dioxide. The immersion layer can include liquid and/or solid immersion layers. The need for organic solvents in immersion lithography can thereby be reduced or eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.