Organic field effect transistor with an organic dielectric
US7029945B2 · kind B2 · utility
40Cited by
11References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2002 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Nov 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of manufacturing an organic field effect device is provided comprising the steps of (a) depositing from a solution an organic semiconductor layer; and (b) depositing from a solution a layer of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer, wherein the low permittivity insulating material is of relative permittivity from 1.1 to below 3.0. In addition, an organic field effect device manufactured by the process is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.