Thin film dielectrics for capacitors and methods of making thereof
US7029971B2 · kind B2 · utility
33Cited by
11References
28Claims
0Family size
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Key dates
| Filing date | Jul 17, 2003 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Jun 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/125
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.