Controlling the location of conduction breakdown in phase change memories
US7029978B2 · kind B2 · utility
19Cited by
3References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 4, 2003 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Dec 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A phase change memory may be formed in a pore of a semiconductor structure. A selected region of the pore may be processed so that breakdown in that region is either more or less likely. As a result, by reducing the variation in the location of breakdown from cell to cell and memory to memory, greater consistency can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.