Single transistor rare earth manganite ferroelectric nonvolatile memory cell
US7030435B2 · kind B2 · utility
47Cited by
99References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 24, 2001 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Oct 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device is formed of the one transistor cell type. Such a device has a substrate, a ferroelectric layer which is a film of rare earth manganite, and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer. The invention includes such a device and methods of making the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.