Tuneable electromagnetic bandgap structures based on high resistivity silicon substrates
US7030463B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2004 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | May 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P3/003
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method producing such a TEBG structure are disclosed. The present invention provides a semiconductive substrate having an oxide layer, a first conductive layer positioned on the oxide layer, a ferroelectric layer covering the first conductive layer, and a second conductive layer positioned on a surface of the tunable ferroelectric layer. The use of the ferroelectric layer, which have a DC electric field dependent permittivity, enables a small size, tunable EBG structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.