Patent · US Expired

Electron emission device with multi-layered fate electrode

US7030550B2 · kind B2 · utility

2Cited by
7References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 1, 2002
Grant dateApr 18, 2006
Priority date
Expiry dateJul 11, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2329/00
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Low-cost electron emission device and field emission display using a cold cathode electron source having a high electron beam utilization efficiency and capable of controlling the spread of the electron beam. Under the condition Ea≧Eg, the electric field strength near the gate electrode forming an electron emission control unit is varied between a central portion and a peripheral portion in the plane of a single pixel (or sub-pixel), thereby controlling the spread of the electron beam. A device using a field emission-type electron source array capable of achieving a high emission current density at low voltage can be realized at low cost.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.