Long wavelength VCSEL device processing

US7031363B2 · kind B2 · utility

Assignee

• FINISAR CORPORATION · US

Inventors

• James R. Biard · Richardson, US
• Klein L. Johnson · Windom, US
• Ralph H. Johnson · Plano, US
• Gyoungwon Park · Medina, US
• Tzu-Yu Wang · Taipei, TW

Key dates

• Filing date: Oct 29, 2003
• Grant date: Apr 18, 2006
• Expiry date: Jul 16, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2304/00
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contacts, thick and thin pad dielectric, air bridges and wafer thinning.