Semiconductor manufacturing method and semiconductor manufacturing apparatus
US7033843B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2003 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Nov 25, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/908
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.