Method for making Group III nitride devices and devices produced thereby
US7033858B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2004 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Apr 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.