Structure and manufacturing method for nitride-based light-emitting diodes
US7033949B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2003 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Jul 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A method for manufacturing a GaN-based light-emitting diode (LED) is provided with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact layer, a light-emitting layer and a p-type GaN contact layer; forming a digital penetration layer on the p-type GaN contact layer; using a multi-step dry etching method to etch the digital penetration layer, the p-type GaN contact layer, the light-emitting layer to form an n-metal forming area, etching terminating at the light-emitting layer; forming a first ohmic contact electrode on the digital penetration layer for a p-type ohmic contact layer and a second ohmic contact electrode on the n-metal forming area for an n-type ohmic contact layer; and finally, forming pads on both first and second ohmic contact electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.