Material systems for semiconductor tunnel-junction structures
US7034331B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2004 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Jun 23, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/918
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.