Apparatus for measuring of thin dielectric layer properties on semiconductor wafers with contact self aligning electrodes
US7034563B1 · kind B1 · utility
7Cited by
13References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2005 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Jan 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6838
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to metrology of thin dielectric layers on semiconductor wafers, interfaces of dielectric layers to the wafer substrates and substrates properties of semiconductor wafers. The invention allows measurement of the metrology data for thin dielectric layers on semiconductor wafers electrically via using contact electrodes that align their contact surface to the wafer surface locally at the measurement sites.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.