Nonvolatile magnetic memory device and method of writing data into tunnel magnetoresistance device in nonvolatile magnetic memory device
US7035136B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2004 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Mar 31, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile magnetic memory device having a nonvolatile magnetic memory array comprising write-in word line(s), bit lines and tunnel magnetoresistance devices, wherein when data is written into the tunnel magnetoresistance device, a current I(m)RWL is passed through the m-th-place write-in word line, a current g(0)·I(n)BL is passed through the n-th-place bit line, and at the same time, a current g(k)·I(n)BL is passed through the q-th-place bit line (q=n+k, k is ±1, ±2, . . . , and the total number of the lines is K), and a spatial FIR filter assuming magnetic fields, which are supposed to be formed in the n-th-place bit line and the bit lines that are K in number by the current I(n)BL, to be discrete pulse response and assuming the coefficients g(0) and g(k) to be tap-gains is constituted of the n-th-place bit line and the bit lines that are K in number.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.