Method of manufacturing a semiconductor light-emitting element
US7037738B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2003 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Dec 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.