Fabrication method of an epilayer structure InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency
US7037739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2004 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jun 16, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A fabrication method of an epilayer structure for InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency. It relates to a P-p-n-N InGaAsP/InP ridge waveguide phase modulator fabricated to be that the phase change of the TE-mode is linearly proportional to the reverse bias voltage at 1.55 μm wavelength. A method for fabricating an epilayer structure for achieving the optical confinement in the vertical direction of an InGaAsP/InP waveguide phase modulator, characterized by comprising the steps of: forming a first cladding layer of N-InP on an N+-InP substrate; forming a first waveguide layer of n-InGaAsP and a second waveguide layer of p-InGaAsP in sequence on the first cladding layer; forming a second cladding layer of P-InP and a third cladding layer of P-InP in sequence on the second waveguide layer; and forming an electrode layer of p+InGaAs on the third cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.