Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane
US7037746B1 · kind B1 · utility
69Cited by
16References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 27, 2004 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Dec 27, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB06B1/0292
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A capacitive micromachined ultrasound transducer (cMUT) cell is presented. The cMUT cell includes a lower electrode. Furthermore, the cMUT cell includes a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electrode, wherein the diaphragm comprises one of a first epitaxial layer or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.