Method and apparatus for oxidizing nitrides
US7037861B2 · kind B2 · utility
0Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2004 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Oct 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02326
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for oxidizing a nitride film is disclosed, which includes the steps of: providing a nitride film formed on an electrically conductive substrate; irradiating the nitride film with a light beam and getting close to the nitride film with a electrically conductive probe; and exerting a bias between the electrically conductive substrate and the electrically conductive probe. The method can oxidize the nitrides quickly and reduce the cost building a nano-structure in the nitride film. An apparatus for oxidizing a nitride film is also disclosed herewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.