Critical dimension measurement by diffration
US7038207B2 · kind B2 · utility
1Cited by
8References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 12, 2003 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Feb 14, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Diffraction which is used to measure features on a substrate layer is disclosed. A substrate, such as a mask structure for microelectronics or a semiconductor substrate with reflective or transmissive features, is irradiated by a source emitting radiation of known wavelength at an angle of incidence relative to the substrate. Given a known pitch, the width of the features themselves is measured by analyzing a diffraction pattern by computer after capturing characteristics of the pattern with a detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.