Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation

US7038231B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Mark Whitney Hart · San Jose, US
• Christie R. K. Marrian · Marbury, US
• Gary M. McClelland · Palo Alto, US
• Charles Thomas Rettner · San Jose, US
• Hermantha K. Wickramasinghe · San Jose, US

Key dates

• Filing date: Apr 30, 2004
• Grant date: May 2, 2006
• Expiry date: May 15, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.