GaN-based field effect transistor of a normally-off type
US7038253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2004 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Aug 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
According to the present invention, there is provided a new GaN-based field effect transistor of a normally-off type, which has an extremely small ON resistance during operation and is capable of a large-current operation. The GaN-based field effect transistor according to the present invention comprises source and drain electrodes; a channel portion made of a first GaN-based semiconducting material that is an i-GaN-based semiconducting material or a p-GaN-based semiconducting material, the channel portion being so formed as to be electrically connected to the source and drain electrodes; first and second electron supply portions made of a second GaN-based semiconducting material having greater bandgap energy than the first GaN-based semiconducting material, the first and second electron supply portions being joined to the channel portion and located separately from each other; an insulating layer formed on the surface of the channel portion, which spreads between the first and second electron supply portions; and a gate electrode disposed on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.