Semiconductor laser device
US7039085B2 · kind B2 · utility
3Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2004 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jun 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0287
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a dielectric multilayer film with a reflectance of 40% or more, on at least one of optical exit faces of a laser chip. The dielectric multilayer film includes a film of tantalum oxide (Ta2O5) and another film of a dielectric oxide, such as aluminum oxide (Al2O3), and silicon oxide (SiO2). The tantalum oxide film has an optical absorption coefficient smaller than that of silicon (Si) and thermal stability in emission superior to that of titanium oxide (TiO2), thereby remarkably improving the catastrophic optical damage degradation level of the laser chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.