Method for producing smooth indium-tin-oxide layers on substrates and a substrate coating of indium-tin-oxide
US7041588B2 · kind B2 · utility
10Cited by
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22Claims
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Key dates
| Filing date | Jun 18, 2004 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Jul 22, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method for producing ITO layers on substrates, especially for the production of organic light-emitting diodes, part of the ITO layer thickness is applied first by sputter-deposition, at a controlled temperature profile, in such manner that the formation of crystallization nuclei is prevented; subsequently, the partially coated substrate is heated to a temperature above the recrystallization temperature of the ITO layer, and then the rest of the ITO layer is sputter-deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.