Radiation-emitting semiconductor component

US7042013B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Norbert Linder · Wenzenbach, DE
• Peter Stauss · Regensburg, DE
• Mark Hampel · Regensburg, DE
• Klaus Streubel · Hemau, DE

Key dates

• Filing date: Aug 22, 2003
• Grant date: May 9, 2006
• Expiry date: Sep 8, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/811

Abstract

A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer (18), a p-doped cladding layer (20), and an active layer (14) based on InGaAlP arranged between the n-doped cladding layer (18) and the p-doped cladding layer (20). A diffusion stop layer (16) is arranged between the active layer (14) and the p-doped cladding layer (20). The diffusion stop layer (16) is formed by a strained superlattice.