Magnetic memory using single domain switching by direct current
US7042036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2004 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Nov 12, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/0808
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for implementing miniaturization of magnetic random access memory (MRAM) and a magnetic memory using single domain switching by direct current are provided. The magnetic memory preferably includes a half-circle or U-shaped architecture with an exchange biasing pad, such as a FeMn exchange biasing pad that effectively generates a head-to-head magnetization configuration. The magnetic memory also includes nanometer scale notches in order to minimize magnetostatic interaction between a single domain memory element and the spin current sources and to effectively trap the magnetic domain wall. Reading the bit can be carried out by anisotropic magnetoresistance, or by other means of determining the magnetization orientation through resistance measurements, such as a spin valve or a magnetic tunneling junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.