Silicon-oxycarbide high index contrast, low-loss optical waveguides and integrated thermo-optic devices
US7043133B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2004 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Aug 14, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/121
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Silicon-oxycarbide optical waveguides and thermooptic devices include a substrate and a first cladding layer having a first refractive index positioned over a substrate. A first core layer comprising silicon, oxygen, and carbon and having a core refractive index is formed on the first cladding layer by chemical vapor deposition using at least two precursors: one inorganic silicon precursor gas and at least one second precursor gas comprising carbon and oxygen. Alternatively, at least three precursors can be used: one inorganic silicon precursor gas, a second precursor comprising carbon, and a third precursor comprising oxygen. The core layer is lithographically patterned to define waveguide elements. A second cladding layer having a second cladding refractive index is formed to surround the optical core waveguiding element of the first core layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.