Method of manufacturing a field emission device utilizing the sacrificial layer
US7044822B2 · kind B2 · utility
2Cited by
12References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2003 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Apr 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2209/0223
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate, a cathode electrode formed on the substrate, a gate insulating layer which is formed on the cathode electrode and has a through hole corresponding to part of the cathode electrode, a gate electrode which has a gate hole corresponding to the through hole and is formed on the gate insulating layer, and an emitter formed on the gate electrode exposed to the bottom of the through hole. The emitter has a stack structure formed of a resistive material layer and an electron emission material layer containing a fine electron emission source formed on the resistive material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.