Method of making a tunneling emitter
US7044823B2 · kind B2 · utility
5Cited by
29References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2004 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Oct 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/312
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.